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High electron mobility transistor
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21	PH10 TECHNOLOGY The new UMS 0.1µm GaAs Very High Frequency pHEMT Process UMS is now pleased to extend its foundry offer with the opening of 0.1µm High Frequency GaAs pHEMT process. PH10 process is optimised for low noi Add to Reading List Source URL: www.ums-gaas.com Language: English - Date: 2012-07-19 03:50:56 High electron mobility transistor Gallium arsenide Chemistry Electronics Resistor
22	GaAs & GaN Build your own solution with UMS FOUNDRY Add to Reading List Source URL: www.ums-gaas.com Language: English - Date: 2013-07-19 03:07:38 Compound semiconductors Inorganic compounds Solar cells Semiconductor devices Monolithic microwave integrated circuit High electron mobility transistor Gallium arsenide MESFET Wafer Chemistry Electronics Semiconductor device fabrication
23	✪ FURTHER READING ➔ Page 406 Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:14:36 High electron mobility transistor Indium gallium arsenide Compound semiconductors Transistor Heterojunction Gallium arsenide Indium phosphide CMOS Chemistry Electronics Optoelectronics
24	PDF Document Add to Reading List Source URL: www.barnardmicrosystems.com Language: English - Date: 2013-11-28 12:36:50 Electronic design automation Electronic circuit simulation Monolithic microwave integrated circuit SPICE High electron mobility transistor Gallium arsenide Logic simulation Quite Universal Circuit Simulator Electronic engineering Electronics Digital electronics
25	PDF Document Add to Reading List Source URL: www.mitsubishielectric.com Language: English - Date: 2014-10-03 00:00:29 Inorganic compounds Amplifiers High electron mobility transistor DBm Low-noise amplifier Transistor Gallium arsenide Field-effect transistor Microwave Chemistry Technology Compound semiconductors
26	PDF Document Add to Reading List Source URL: www.mitsubishielectric-usa.com Language: English - Date: 2015-01-22 16:04:54 Inorganic compounds Amplifiers High electron mobility transistor DBm Low-noise amplifier Transistor Gallium arsenide Field-effect transistor Microwave Chemistry Technology Compound semiconductors
27	APPLIED PHYSICS LETTERS 91, 123512 共2007兲 Cryogenic amplifier for fast real-time detection of single-electron tunneling I. T. Vink,a兲 T. Nooitgedagt, R. N. Schouten, and L. M. K. Vandersypen Kavli Institute of Nan Add to Reading List Source URL: vandersypenlab.tudelft.nl Language: English - Date: 2012-07-25 03:29:30 Noise Johnson–Nyquist noise 2DEG Quantum point contact Transistor Shot noise High electron mobility transistor Electromagnetism Electronics Electrical engineering
28	RWS: Ultra Low Noise Cryogenic Amplifiers for Radio Astronomy Add to Reading List Source URL: science.nrao.edu Language: English - Date: 2014-05-01 15:26:44 Integrated circuits Monolithic microwave integrated circuit Josephson effect Quantum electronics Superconductivity Sensors High electron mobility transistor Low-noise amplifier Heterojunction bipolar transistor Electronics Electromagnetism Technology
29	PRL 101, week ending 28 NOVEMBERPHYSICAL REVIEW LETTERS Add to Reading List Source URL: vandersypenlab.tudelft.nl Language: English - Date: 2012-07-20 04:39:06 Nanoelectronics Quantum mechanics Quantum point contact Schottky barrier Transistor High electron mobility transistor Heterojunction Aluminium gallium arsenide Shot noise Electronics Physics Electromagnetism
30	PAGE • MAY 2007 FEATURE ARTICLE www.mpdigest.com Add to Reading List Source URL: www.aethercomm.com Language: English - Date: 2010-09-21 18:03:27 Transistor Audio engineering Gallium nitride Amplifier Monolithic microwave integrated circuit High electron mobility transistor Field-effect transistor Gain compression Audio power Electronics Electronic engineering Technology

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